Fabrication and Electrical Characterization of Ultra-Thin Body and BOX (UTBB) Back Enhanced SOI (BESOI) pMOSFET

Authors

  • Ricardo Cardoso Rangel University of Sao Paulo
  • Katia R. A. Sasaki University of Sao Paulo https://orcid.org/0000-0002-1793-610X
  • Leonardo Shimizu Yojo University of Sao Paulo
  • João Antonio Martino University of Sao Paulo

DOI:

https://doi.org/10.29292/jics.v15i1.107

Keywords:

BESOI MOSFET, UTBB, fabrication, characterization

Abstract

This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.

Additional Files

Published

2020-05-26

Issue

Section

Selected Papers from 34th Symposium on Microelectronics Technology and Devices