Ensemble Monte Carlo Simulation of Hole Transport in SiGe Alloys

Authors

  • Caroline dos Santos Soares Universidade Federal do Rio Grande Sul
  • Gilson Inácio Wirth Universidade Federal do Rio Grande Sul https://orcid.org/0000-0002-4990-5113
  • Alan Rossetto
  • Dragica Vasileska

DOI:

https://doi.org/10.29292/jics.v16i1.156

Keywords:

Ensemble Monte Carlo, hole transport, scattering mechanism, dispersion relation.

Abstract

This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.

Additional Files

Published

2021-02-22