Analysis of Mismatching on the Analog Characteristics of GC SOI MOSFETs

Authors

  • Camila Alves Centro Universitario FEI
  • Denis Flandre Université catholique de Louvain
  • Michelly de Souza Centro Universitario FEI

DOI:

https://doi.org/10.29292/jics.v13i3.16

Keywords:

graded-channel transistor, SOI MOSFET, mismatching, electrical measurements

Abstract

This paper presents an evaluation of mismatching impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.

Downloads

Published

2018-12-12

Issue

Vol. 13 No. 3 (2018): Journal of Integrated Circuits and Systems

Section

Regular Papers