Zero Temperature Coefficient behavior for Ellipsoidal MOSFET

Authors

  • Luciano Mendes Camillo Electronics Technical Academic Coordination, CEFET/RJ Maracanã, Rio de Janeiro, Rio de Janeiro, Brazil
  • Marcos Paulo Braga de Lima Electric Engineering Program, Federal University of Rio de Janeiro, Rio de Janeiro, Brazil
  • Marco Aurélio Pinhel Peixoto Electronics Technical Academic Coordination, CEFET/RJ Maracanã, Rio de Janeiro, Rio de Janeiro, Brazil
  • Marcello Marcelino Correa Electrical Engineering Department, FEI University Center, São Bernardo do Campo, São Paulo, Brazil
  • Salvador Pinillos Gimenez Electrical Engineering Department, FEI University Center, São Bernardo do Campo, São Paulo, Brazil

DOI:

https://doi.org/10.29292/jics.v15i2.166

Keywords:

Zero temperature coefficient, Ellipsoidal layout style, Simple model, Mobility degradation

Abstract

The zero temperature coefficient (ZTC) is investigated by three-dimensional numerical simulations in the Metal-Oxide-Semiconductor (MOS) Field Effect Transistor (MOSFET) with the ellipsoidal (EM) and conventional rectangular gate geometries (CM), considering the same channel widths (W), gate areas (Ag) and bias condition (BC).   In this work an improved simple model which predicts the ZTC point taking into account only the mobility degradation factor (c) and threshold voltage (Vth) parameters as function of temperature is proposed in the linear and saturation operation regions. The analysis takes into account the temperature variations of the threshold voltage and the mobility degradation factor. Although simple, the model predictions present a good agreement with the numerical simulations results.

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Published

2020-08-23

Issue

Vol. 15 No. 2 (2020): Journal of Integrated Circuits and Systems

Section

Special Section on SBMicro2020