Phase and Amplitude Control Integrated Circuit in 0.18 μm SiGe BiCMOS for Sub-6 GHz Phased Array Applications
Keywords:AESA, BiCMOS, C-band, Core Chip, SiGe
This paper presents simulation results of the C-band transmit/receive (Tx/Rx) phased-arrays integrated circuit (IC) for sub-6 GHz communication links. It is based on 0.18 μm SiGe BiCMOS technology. Phase and amplitude control IC consists of one Tx/Rx channel. Digitally controlled phase shifter allows adjusting relative phase of the output microwave signal in the range from 0 to 360 degrees with 5.625 degree step (6-bit resolution). Digitally controlled active attenuator provides the transfer ratio adjusting in the range from 0 to –31 dB with 1 dB step (5 bit resolution). Amplitude and phase correction system based on integrated temperature sensor, auxiliary 4-bit phase shifter, 4-bit attenuator and digital control unit is implemented. Correction in –60—85 °C temperature range with 5-bit resolu-tion is provided. The root mean square (rms) phase adjustment error does not exceed 1.6 degree. The rms attenuation error does not exceed 0.37 dB. The noise figure in Rx mode is below 6.5 dB. The output power in Tx mode is above 6 dBm at P1dB. The power consumption is 375 mW and 525 mW in Rx and Tx modes respectively.