Conductance of Single- and Double-Gated Quantum Stub Transistor

Authors

  • Alexandre B. Guerra
  • Edval J. P. Santos

DOI:

https://doi.org/10.29292/jics.v1i2.262

Keywords:

Nanodevice, tight-binding Hamiltonian, Green function, quantum stub transistor, quantum transport

Abstract

Quantum stub transistors are low power, high frequency, and nanometer-size devices, and as such they are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized transport. In this paper, we present the simulation of the conductance of the quantum stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The results suggest how the electrical behavior of the quantum stub transistor may be improved.

Additional Files

Published

2020-11-17