Conductance of Single- and Double-Gated Quantum Stub Transistor
DOI:
https://doi.org/10.29292/jics.v1i2.262Keywords:
Nanodevice, tight-binding Hamiltonian, Green function, quantum stub transistor, quantum transportAbstract
Quantum stub transistors are low power, high frequency, and nanometer-size devices, and as such they are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized transport. In this paper, we present the simulation of the conductance of the quantum stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The results suggest how the electrical behavior of the quantum stub transistor may be improved.
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Published
2020-11-17
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Regular Papers