Charge-Based Continuous Equations for the Transconductance and Output Conductance of Graded-Channel SOI MOSFET’s

Authors

  • Michelly de Souza
  • Marcelo A. Pavanello

DOI:

https://doi.org/10.29292/jics.v2i2.274

Keywords:

Graded-Channel, SOI MOSFET, Transconductance, Output conductance, Device modeling

Abstract

This paper presents charge-based continuous equations for the transconductance and output conductance of submicrometer Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. The effects of carrier velocity saturation, channel length modulation and drain-induced barrier lowering were taken into account in the proposed equations. Experimental results were used to test the validity of the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement in a wide range of bias.

Additional Files

Published

2020-11-18