A Study of Flicker Noise in MOS Transistor Under Switched Bias Condition

Authors

  • Matías Miguez
  • Alfredo Arnaud

DOI:

https://doi.org/10.29292/jics.v3i2.283

Keywords:

flicker noise switched biased MOS

Abstract

This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.

Additional Files

Published

2020-11-18