Parameters Extraction from C-V Curves in Triple-Gate FinFET

Authors

  • Michele Rodrigues
  • Victor Sonnenberg
  • João Antonio Martino

DOI:

https://doi.org/10.29292/jics.v3i2.285

Keywords:

FinFET, CV curve, Electrical Characterization, Effective Oxide Thickness, Fin Height

Abstract

Methods to determine the effective oxide thickness (EOT), fin height (Hfin) and fin doping concentration (Nfin) through gate to drain/source capacitance as a function of the front and the back gate voltage curves in triple-gate nMOS FinFET are presented. The proposed methods were validated through three-dimensional numerical simulations and experimental measurements showing that these methods can be also applied in triple-gate nMOS FinFET devices as a powerful tool for experimental validation.

Additional Files

Published

2020-11-18