Gate Oxide Thickness Influence on the Gate Induced Floating Body Effect in SOI Technology

Authors

  • Paula G. D. Agopian
  • João Antonio Martino
  • Eddy Simoen
  • Cor Claeys

DOI:

https://doi.org/10.29292/jics.v3i2.287

Keywords:

Gate Induced Floating Body Effect, Gate oxide thickness, SOI technology, Body potential, Gate current

Abstract

In this work, we explore the gate oxide thickness influence on the Gate Induced Floating Body effect (GIFBE). This study was performed through two-dimensional numerical simulations and electrical measurements. The available devices are from 130nm and 65nm Silicon-On-Insulator (SOI) MOSFET technologies. The GIFBE and threshold voltage are evaluated as function of the gate oxide thickness reduction and an overlap tendency of the first and the second transconductance peaks is observed.

Additional Files

Published

2020-11-18