A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor

Abstract

In this work, a simple model that accounts for the variation of electron mobility as a function of the silicondielectric interface crystallographic orientation is presented. Simulations were conducted in order to compute the effective mobility of planar devices and its results were compared to experimental data for several interface orientations. The error between experimental data and the proposed model remained bellow 4%. The model has been applied to nMOS circular surrounding gate (thin-pillar transistor - CYNTHIA) and allowed the observation of current density variations as a function of the interface orientation around the silicon pillar.