Impact of the Series Resistance in the I-V Characteristics of Junctionless Nanowire Transistors and its dependence on the Temperature

Authors

  • Rodrigo T. Doria
  • Renan D. Trevisoli
  • Michelly de Souza
  • Marcelo Antonio Pavanello

DOI:

https://doi.org/10.29292/jics.v7i2.364

Keywords:

Junctionless, Series resistance, Incomplete ionization, Zero Temperature Coefficient

Abstract

The effect of the source/drain parasitic resistance (RS) on the I-V characteristics of Junctionless Nanowire Transistors (JNTs) has been evaluated through experimental and simulated data. The impact of several parameters such as the temperature, the fin width, the total doping concentration, the source/drain length and the source/drain doping concentration on RS has been addressed. The source/drain parasitic resistance presented by JNTs was compared to the one presented by classical inversion mode (IM) triple gate devices, showing opposite behavior with the temperature variation in IM triple transistors and JNTs. In the latter, a reduction on RS is noted with the temperature increase, which is related to the incomplete ionization. This effect inhibits the presence of a Zero Temperature Coefficient (ZTC) operation bias in the Junctionless devices.

Additional Files

Published

2020-12-27

Issue

Section

Special Section on Best SBMicro2011 Papers