Reliability Concerns due to Self-Heating effects in GaN HEMTs

Authors

  • B. Padmanabhan
  • D. Vasileska
  • S. M. Goodnick

DOI:

https://doi.org/10.29292/jics.v8i2.376

Keywords:

GaN HEMTs, Self-heating, Current collapse

Abstract

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

Additional Files

Published

2020-12-28