Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results

Authors

  • Albert Nissimoff
  • Katia R. A. Sasaki
  • Marc Aoulaiche
  • João Antonio Martino
  • Eddy Simoen
  • Cor Claeys

DOI:

https://doi.org/10.29292/jics.v9i2.393

Keywords:

1T-FBRAM, UTBOX SOI, read window, sense margin

Abstract

This paper presents the concept and implementation of a complete 1T-DRAM memory characterization setup and analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate voltage during the read operation. It will be demonstrated both experimentally and by simulation that a novel two-sided read window is possible where the two main effects present, GIDL and parasitic BJT, can be effectively accounted for in two different zones.

Additional Files

Published

2020-12-28