Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results

Abstract

This paper presents the concept and implementation of a complete 1T-DRAM memory characterization setup and analyzes the read windows of decananometer UTBOX SOI 1T-DRAM memory devices focusing on the mechanisms involved as a function of the applied gate voltage during the read operation. It will be demonstrated both experimentally and by simulation that a novel two-sided read window is possible where the two main effects present, GIDL and parasitic BJT, can be effectively accounted for in two different zones.