Parasitic Conduction Response to X-ray Radiation in Unstrained and Strained Triple-Gate SOI MuGFETs

Authors

  • Fernando F. Teixeira
  • Caio C. M. Bordallo
  • Marcilei A. Guazzelli
  • Paula Ghedini Der Agopian
  • João Antonio Martino
  • Eddy Simoen
  • Cor Clayes

DOI:

https://doi.org/10.29292/jics.v9i2.394

Keywords:

X-ray radiation, Multiple-Gate MOSFETs, MuGFETs, Parasitic back conduction

Abstract

In this work, the X-ray irradiation impact on the back gate conduction and drain current for Triple-Gate SOI FinFETs is investigated for strained and unstrained devices. Both types (P and N) of transistors were analyzed. Since X-rays promote trapped positive charges in the buried oxide, the second interface threshold voltage shifts to lower gate voltage. The performance of n-channel devices presented a strong degradation when submitted to X-rays, while for p-channel devices the opposite trend was observed. Two different dose rates were analyzed.

Additional Files

Published

2020-12-28