The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

Abstract

The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature, the doping concentration and the geometry on the overall linearity have been evaluated. The increase of the series resistance associated both to the variation of the physical parameters and the incomplete ionization effect has shown to improve the second order distortion and degrade the third order one.