Mitigating MOSFET Radiation Effects by Using the Wave Layout in Analog ICs Applications

Authors

  • Rafael Navarenho de Souza
  • Marcilei A. Guazzelli
  • Salvador P. Gimenez

DOI:

https://doi.org/10.29292/jics.v10i1.402

Keywords:

Wave layout, Radiation, X-ray, Total ionizing dose, TID, Analog circuits

Abstract

This paper presents an experimental comparative study of the Total Ionizing Dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layout (CnM). Because of the special geometric characteristic of the gate, drain and source regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to mitigate the TID effects in order to implement in analog integrated circuits (IC) for space and medical applications without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.

Additional Files

Published

2020-12-28