Effect of substrate type on structure of TiO2 thin film deposited by atomic layer deposition technique


  • R. S. Pessoa
  • F. P. Pereira
  • G. E. Testoni
  • W. Chiappim
  • H. S. Maciel
  • L. V. Santos




atomic layer deposition, thin film, titanium dioxide, elemental composition, material structure


This paper discusses about the effect of substrate type on structure of titanium dioxide thin film deposited by atomic layer deposition technique using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100), cover glass and titanium, and the depositions were performed at temperatures ranging from 300ºC to 450 ºC. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase could be obtained in almost pure phase at temperature of 450 ºC, however only for glass and titanium substrates. For the case of silicon (100) substrate, the anatase phase was preponderant for process temperatures investigated.

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