MOSFET ZTC Condition Analysis for a Self-biased Current Reference Design

Authors

  • Pedro Toledo
  • Hamilton Klimach
  • David Cordova
  • Sergio Bampi
  • Eric Fabris

DOI:

https://doi.org/10.29292/jics.v10i2.411

Keywords:

MOSFET ZTC Condition, Current Reference Source, Low Temperature Coefficient

Abstract

In this paper a self-biased current reference based on Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Zero Temperature Coefficient (ZTC) condition is proposed. It can be implemented in any Complementary Metal-Oxide-Semiconductor (CMOS) fabrication process and provides another alternative to design current references. In order to support the circuit design, ZTC condition is analyzed using a MOSFET model that is continuous from weak to strong inversion, showing that this condition always occurs from moderate to strong inversion in any CMOS process. The proposed topology was designed in a 180 nm process, operates with a supply voltage from 1.4V to 1.8 V and occupies around 0.010mm2 of silicon area. From circuit simulations our reference showed a temperature coefficient (TC) of 15 ppm/oC from -40 to +85oC, and a fabrication process sensitivity of σ/μ = 4.5% for the current reference, including average process and local mismatch variability analysis. The simulated power supply sensitivity is estimated around 1%/V.

Additional Files

Published

2020-12-28