Bio-Amplifier based on MOS bipolar Pseudo-Resistors: A New Approach using its non-linear characteristic

Abstract

This paper proposes a new and refined bio-amplifier design, which associates DC offset cancellation, adequate frequency response and buffered outputs to a significant reduction of the signal recovery time. A MOS-Bipolar pseudo-resistor integrated to the feedback network of a single-stage Operational Transconductance Amplifier and the source-follower buffers give to the new topology its main advantages. This architecture makes use of the high resistance values of these pseudo-resistors to eliminate the offset DC level input preserving the low cut-off frequency, without the need of high capacitances, thereby significantly reducing the active die area, which enables its use as a front-end pre-amplifier assembled directly on the acquisition probes. The recovery time after an input voltage transitory of high-amplitude is an important characteristic of the bio-potential amplifiers due to their very low cut-off frequency. The proposed bio-amplifier utilizes the non-linear characteristics of the pseudo-resistor in the recovery time reduction. This time was evaluated and the topology presented a significant contribution in this aspect, assuming values 90% lower when compared with the same topology using a constant resistance. The new amplifier allows voltage gain of 30dB from 0.6 Hz to 2 kHz, and Total Harmonic Distortion (THD) of 0.19% for an input signal of 10Hz. This work also provides a behavioral spice model for MOS-Bipolar pseudo-resistor, which allows an accurate simulation of the linear and nonlinear pseudo-resistor characteristics, obtained through an experimental method of indirect characterization. This method is based on the transitory response from a first order RC low pass filter. The experimental characterization method is of fundamental importance, due to the absence of appropriate SPICE models that describe with precision the pseudo-resistance behavior. The circuits were manufactured by MOSIS on 8HP SiGe BiCmos Global Foundries 0.13μm technology.