Analysis and Design of a Low Noise Shunt-Shunt CMOS Transimpedance Amplifier for 10 Gbps Optoelectronic Receivers

Authors

  • André F. Ponchet
  • Jacobus W. Swart
  • Ezio M. Bastida
  • Célio A. Finardi
  • Roberto R. Panepucci
  • Stefan Tenenbaum
  • Saulo Finco

DOI:

https://doi.org/10.29292/jics.v12i1.445

Keywords:

Transimpedance Amplifier, Optoelectronic Receiver, Low Noise Amplifier, RF CMOS

Abstract

This article presents a complete design flow of a low noise transimpedance amplifier for 10 Gbps optoelectronic receivers. The proposed topology is based on the shunt-shunt structure with negative feedback. A set of equations was deduced from the frequency analysis and noise analysis. An optimization algorithm is proposed in order to maximize the bandwidth and improve the noise performance simultaneously. Experimental results shown a 51 dBΩ transimpedance gain, a 10.54 Ghz bandwidth and an input referred current noise equal to 6.8, the lowest one between other state-of-art designs. The circuit was manufactured in 130 nm RF CMOS technology.

Additional Files

Published

2020-12-28