Boosting the MOSFETs Matching by Using Diamond Layout Style

Authors

  • Vinicius Vono Peruzzi
  • Christian Renaux
  • Denis Flandre
  • Salvador Pinillos Gimenez

DOI:

https://doi.org/10.29292/jics.v12i1.448

Keywords:

Devices Matching, SOI nMOSFET, Analog SOI CMOS ICs

Abstract

This manuscript presents an experimental comparative study between the Metal-Oxide-Semiconductor (MOS) Silicon-On-Insulator (SOI) Field Effect Transistors, n-type, (nMOSFETs) matching, which are implemented with the hexagonal gate shape (Diamond) and standard rectangular ones. The main analog parameters and figures of merit of 360 devices are investigated. The results establish that the Diamond SOI MOSFETs with α angles equal to 90o can boost in more than in average -45.8% with a standard deviation of 20.1% the devices matching in comparison to those found with the typical rectangular SOI MOSFETs, concerning the same gate area and bias conditions. Consequently, the Diamond layout style is an alternative technique to reduce the nMOSFETs’ mismatching, considering the analog SOI Complementary MOS (CMOS) integrated circuits (ICs) applications.

Additional Files

Published

2020-12-28