Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

Authors

  • Rafael Assalti
  • Rodrigo T. Doria
  • Denis Flandre
  • Michelly de Souza

DOI:

https://doi.org/10.29292/jics.v12i2.452

Keywords:

Asymmetric Self-Cascode, Low-Frequency Noise, FD SOI nMOSFET, Trap Density

Abstract

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

Additional Files

Published

2020-12-28