Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET
DOI:
https://doi.org/10.29292/jics.v16i3.566Keywords:
III/V devices, 60Co, GaN, TID, radiation, X-rayAbstract
In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source.
Downloads
Published
Issue
Section
License
Copyright (c) 2021 Journal of Integrated Circuits and Systems

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.