Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET

Authors

  • Alexis Cristiano Vilas Bôas University Center of FEI - Brazil
  • Saulo Gabriel Alberton University of São Paulo (USP) - Brazil
  • Nilberto Medina University of São Paulo (USP) - Brazil
  • Vitor Ângelo Paulino University of São Paulo (USP) - Brazil
  • Marco Antonio Assis Melo University Center of FEI - Brazil
  • Roberto Baginski Santos University Center of FEI - Brazil
  • Renato Giacomini University Center of FEI - Brazil
  • Tássio Cavalcante Institute for Advanced Studies (IEAv) - Brazil
  • Rafael Galhardo Vaz Institute for Advanced Studies (IEAv) - Brazil
  • Evaldo Junior Institute for Advanced Studies (IEAv) - Brazil
  • Luis Seixas Renato Archer Center for Information Technology (CTI) - Brazil
  • Saulo Finco Renato Archer Center for Information Technology (CTI) - Brazil
  • Marcilei Guazzelli University Center of FEI - Brazil

DOI:

https://doi.org/10.29292/jics.v16i3.566

Keywords:

III/V devices, 60Co, GaN, TID, radiation, X-ray

Abstract

In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source. 

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Published

2021-12-31

Issue

Vol. 16 No. 3 (2021): Journal of Integrated Circuits and Systems

Section

Special Issue on Hardware and Software Fault Tolerance

License

Copyright (c) 2021 Journal of Integrated Circuits and Systems

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.