Reliability analysis of gamma- and X-ray TID effects, on a commercial AlGaN/GaN based FET

Authors

  • Alexis Cristiano Vilas Bôas University Center of FEI - Brazil
  • Saulo Gabriel Alberton University of São Paulo (USP) - Brazil
  • Nilberto Medina University of São Paulo (USP) - Brazil
  • Vitor Ângelo Paulino University of São Paulo (USP) - Brazil
  • Marco Antonio Assis Melo University Center of FEI - Brazil
  • Roberto Baginski Santos University Center of FEI - Brazil
  • Renato Giacomini University Center of FEI - Brazil
  • Tássio Cavalcante Institute for Advanced Studies (IEAv) - Brazil
  • Rafael Galhardo Vaz Institute for Advanced Studies (IEAv) - Brazil
  • Evaldo Junior Institute for Advanced Studies (IEAv) - Brazil
  • Luis Seixas Renato Archer Center for Information Technology (CTI) - Brazil
  • Saulo Finco Renato Archer Center for Information Technology (CTI) - Brazil
  • Marcilei Guazzelli University Center of FEI - Brazil

DOI:

https://doi.org/10.29292/jics.v16i3.566

Keywords:

III/V devices, 60Co, GaN, TID, radiation, X-ray

Abstract

In this work, measurements were taken to investigate the robustness of a GaN HEMT to TID by a 60CO Source. These results will be compared with a previous X-ray based work. The robustness was investigated through IxV curves and characteristic parameters of the irradiated device. The analysis included data acquired both from on- and off- state modes. The work concludes that the device is robust to TID, as it quickly recovered important parameters. Mainly, the on-state mode, which presented a better performance compared to the off-mode. An analogous behavior was seen for X-ray. Finally, the VTH values due to the TID, in this device is independent of the dose rate and the radiation source. 

Additional Files

Published

2021-12-31

Issue

Section

Special Issue on Hardware and Software Fault Tolerance