Reconfigurable SOI-MOSFET: Past, Present and Future Applications

Authors

  • Ricardo Rangel University of São Paulo (USP) - Brazil
  • Kátia Sasaki São Paulo State University (UNESP) - Brazil
  • João A. Martino University of São Paulo (USP) - Brazil

Keywords:

Sensor, Reconfigurable-FET, Biosensor, SOI-MOS, Electrostatic doping

Abstract

This paper presents a historical analysis of reconfigurable field effect transistors (RFETs). History shows the naturalness of its development from the evolution of integrated circuits (ICs) technology. Next, its operating principles are detailed to further study the variety of structures proposed in the specialized literature. Among these structures, the Back Enhanced SOI MOSFET (BESOI MOSFET) has been studied in detail, which stands out for its simplicity of fabrication and the possibility of integration with conventional technologies. The BESOI MOSFET is used to present proofs of concept for RFET applications such as: reconfigurable digital circuits, light sensor, permittivity-based biosensor and charge-based biosensor. The latter may allow, for example, obtaining a glucose sensor. Finally, future perspectives of applications of RFETs are presented, as in systems of protection of the intellectual property of ICs.

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Published

2022-09-17

Issue

Section

Special Issue on Emerging Semiconductor Devices