UTBB FD-SOI MOSFET with SELBOX in DTMOS Configuration

Authors

  • Nilton Graziano Junior São Paulo State University (UNESP), Institute of Science and Technology - Brazil
  • Jeverson Cardoso da Silva Federal University of Goiás (UFG), Institute of Physics - Brazil
  • Everson Martins São Paulo State University (UNESP), Institute of Science and Technology - Brazil
  • Maria Glória Caño De Andrade São Paulo State University (UNESP), Institute of Science and Technology - Brazil

DOI:

https://doi.org/10.29292/jics.v17i3.641

Keywords:

UTBB SOI, SELBOX, DTMOS, analog performance

Abstract

Abstract— For the first time, Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-On-Insulator (UTBB FDSOI)       n-channel with Dynamic Threshold MOS configuration (DTMOS) using the SELBOX (Selective Buried OXide) substrate will be analyzed. The drain and substrate current, transconductance (gm) and Subthreshold Slope (SS) will be compared in the DTMOS mode and the standard biasing configuration for different gap width (WGAP) of SELBOX. Additionally, the output conductance and the transconductance gain also studied through numerical simulations. The results indicate that the SELBOX structure in DTMOS mode is competitive candidates for analog applications.

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Published

2022-12-31

Issue

Vol. 17 No. 3 (2022): Journal of Integrated Circuits and Systems

Section

Regular Papers

License

Copyright (c) 2023 Journal of Integrated Circuits and Systems

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.