Fractional-Order MOS Capacitor: Experimental Results and Monte Carlo Analysis
DOI:
https://doi.org/10.29292/jics.v18i1.660Keywords:
fractal zone, fractional-order MOS capacitor, fabrication mismatch, Monte Carlo simulation, Fractal Tree implementationAbstract
In this work, an experimental implementation of a Fractional-order MOS capacitor using a fractal tree structure in discrete circuits was carried out in order to validate the theoretical results obtained of the simulations. In addition, a Monte Carlo analysis was performed to determine the sensitivity of the electrical circuit to the variation of some parameters.
In these analyzes were observed that for a tolerance of 20% in the device values and for 2σ above and below the median values
(for both, width, and initial frequency value of fractal zone) it is noticed a deviation of 18% and -14%, respectively, which is a
reasonable deviation for a group that contains more than 90% of the samples.
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