Fractional-Order MOS Capacitor: Experimental Results and Monte Carlo Analysis

Authors

  • Lucas Almir dos Santos Fernandes University of Sao Paulo
  • Marco Isaías Alayo Chávez USP
  • Joao Antonio Martino

DOI:

https://doi.org/10.29292/jics.v18i1.660

Keywords:

fractal zone, fractional-order MOS capacitor, fabrication mismatch, Monte Carlo simulation, Fractal Tree implementation

Abstract

In this work, an experimental implementation of a Fractional-order MOS capacitor using a fractal tree structure in discrete circuits was carried out in order to validate the theoretical results obtained of the simulations. In addition, a Monte Carlo analysis was performed to determine the sensitivity of the electrical circuit to the variation of some parameters.
In these analyzes were observed that for a tolerance of 20% in the device values and for 2σ above and below the median values
(for both, width, and initial frequency value of fractal zone) it is noticed a deviation of 18% and -14%, respectively, which is a
reasonable deviation for a group that contains more than 90% of the samples.

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Published

2023-05-22

Issue

Section

Selected Papers from SBMicro 2022