Vol. 3 No. 2 (2008): Journal of Integrated Circuits and Systems

Regular Papers

• Table of Contents and Foreword

  João Antonio Martino, Luigi Carro

  58 - 61

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• A Study of Flicker Noise in MOS Transistor Under Switched Bias Condition

  Matías Miguez, Alfredo Arnaud

  63 - 68

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• Study of Matching Properties of Graded-Channel SOI MOSFETs

  Michelly de Souza, Denis Flandre, Marcelo A. Pavanello

  69 - 75

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• Parameters Extraction from C-V Curves in Triple-Gate FinFET

  Michele Rodrigues, Victor Sonnenberg, João Antonio Martino

  77 - 81

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• Stress Analysis on Ultra Thin Ground Wafers

  Ricardo C. Teixeira, Koen De Munck, Piet De Moor, Kris Baert, Bart Swinnen, Chris Van Hoof, Alexsander Knüettel

  83 - 89

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• Gate Oxide Thickness Influence on the Gate Induced Floating Body Effect in SOI Technology

  Paula G. D. Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys

  91 - 95

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• Fabrication of Silicon Microtips with Integrated Electrodes

  Murilo Z. Mielli, Alex L. Barros, Alexandre T. Lopes, Marcelo Carreño

  97 - 103

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